Kiyoo Itoh, Masashi Horiguchi and Hitoshi Tanaka, "Ultra-Low Voltage Nano-Scale Memories (Integrated Circuits and Systems)" (Repost)
Publisher: Springer | ISBN: 0387333983 | edition 2007 | PDF | 346 pages | 11,71 mb
Ultra-Low Voltage Nano-Scale Memories provides an in-depth discussion of the state-of-the-art nanometer and sub-1-V memory LSIs that are playing decisive roles in power conscious systems. Emerging problems between the device, circuit, and system levels are systematically covered in terms of reliable high-speed operations of memory cells and peripheral logic circuits. The effectiveness of solutions at device and circuit levels is also described at length through clarifying noise components in an array, and even essential differences in ultra-low voltage operations between DRAMs and SRAMs.